- FORMATION OF ULTRA-SHALLOW SEMICONDUCTOR JUNCTION USING MICROWAVE ANNEALING

摘要

The present invention relates to a method of using microwave energy for annealing an ion implanted wafer. By controlling time, power density, and temperature type, it is possible to anneal the wafer substantially completely, while limiting (and substantially preventing) the dopant's diffusion into silicon, thus producing a higher performance scaled semiconductor device. It is possible. Using other conditions, it is also possible to allow and control the dopant profile (diffusion) to silicon. In another aspect of the invention, a dopant profile depth of less than about 50 nm and a profile in which the net doping concentration at the PN junction varies by more than about 1 order over 6 nm, the surface of the dopant A method of forming a PN junction in a semiconductor wafer with a concentration greater than 1x10 ²⁰ / cm 3 is disclosed. The method includes providing a semiconductor wafer that may have a single crystalline or amorphous surface, implanting a dopant into the surface, and exposing the surface to an energy source, wherein the energy source is weak. Energy is supplied at a rate that allows the surface to anneal substantially completely before diffusing to greater than 50 nm. Another aspect of the invention is to have a PN junction formed between a first material of a first conductivity type and a second material of a second conductivity type, the junction having a thickness of less than 50 nm, in the first material The net doping concentration at the junction increases by at least about one order over 10 nm, and the maximum value of the surface concentration of the first conductive material of the wafer is greater than about 1 × 10 ²⁰ / cm 3.