SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE EFFECTIVELY DECREASED IN SURFACE STATE REGARDLESS OF NON-PERMEABLE LAYER FOR CHEMICAL SPECIES AGAINST SURFACE STATE AND PROCESS FOR FABRICATING THEREOF

摘要

The cell plate electrode 35 is shared between the storage capacitors 33, 34 and 35 of the memory cell integrated into the semiconductor dynamic RAM device of the type having the storage capacitor on the bit line 30, and the slit 36 is a channel The cell plate in such a way that the boundary between the region and the gate oxide layer 24 is horizontally spaced from the outer periphery of the cell plate electrode and the slit by a distance below a threshold distance determined based on the diffusion length of hydrogen in the interlayer insulating layer. By being formed at the electrode, hydrogen necessarily reaches the boundary, reducing the interface state density.