Process for growing nanotubes used in the production of a semiconductor element comprises contacting a substrate with a metal compound, contacting with a basic solution, removing the photolacquer, and growing nanotubes on the metal

摘要

Process for growing nanotubes comprises contacting a substrate (100) having a region (107) covered with a photolacquer (101) and a free region (106) with a compound of a catalytically active metal to form a layer on the substrate; contacting the treated substrate with a basic solution so that the catalytically active metal compound is converted into the corresponding hydroxide of the metal; removing the photolacquer so that the hydroxide remains on the free region of the substrate; reducing the hydroxide to the corresponding metal; and growing nanotubes on the metal. Preferred Features: Iron is used as the catalytically active metal. The catalytically active metal compound is FeCl3 or a solution iron salt. The basic solution is a solution of NH3 having a concentration of 5%. The photolacquer is removed with acetone under the action of ultrasound and rinsing with isopropanol.