首页> 外国专利> Production of nanotubes used in a semiconductor element comprises contacting nanotubes connected as anode with a halide salt solution in contact with a cathode, and passing an electrical current through the solution

Production of nanotubes used in a semiconductor element comprises contacting nanotubes connected as anode with a halide salt solution in contact with a cathode, and passing an electrical current through the solution

机译:用于半导体元件的纳米管的生产包括使作为阳极连接的纳米管与与阴极接触的卤化物盐溶液接触,并使电流通过该溶液。

摘要

Production of nanotubes comprises: contacting nanotubes connected as anode (104) with a halide salt solution in contact with a cathode (106); and passing an electrical current through the solution via the anode and cathode to induce an oxidative reaction on the tubes. Preferred Features: The anode and the cathode form parts of an electrochemical cell (100) having a salt bridge (101) with an anode side and a cathode side. The electrolyte used is a chloride or bromide. A current density of maximum 10 mA/cm2 is used.
机译:纳米管的生产包括:使作为阳极(104)连接的纳米管与与阴极(106)接触的卤化物盐溶液接触;使电流通过阳极和阴极通过溶液,以在管子上引起氧化反应。优选特征:阳极和阴极形成具有盐桥(101)的电化学电池(100)的一部分,该盐桥具有阳极侧和阴极侧。所使用的电解质是氯化物或溴化物。使用最大10mA / cm 2的电流密度。

著录项

  • 公开/公告号DE10113551A1

    专利类型

  • 公开/公告日2002-10-02

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2001113551

  • 发明设计人 UNGER EUGEN;

    申请日2001-03-20

  • 分类号B82B3/00;

  • 国家 DE

  • 入库时间 2022-08-22 00:27:01

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