Horizontally growing carbon nanotubes for field effect transistors, involves synthesizing carbon nanotubes at exposed surfaces of catalyst pattern

摘要

Carbon nanotubes are horizontally grown by forming a predetermined catalyst pattern on a first substrate. A vertical growth preventing layer is formed on the first substrate. Apertures (16) are formed on the vertical growth preventing layer and the first substrate to expose the catalyst pattern. Carbon nanotubes are synthesized at exposed surfaces of the catalyst pattern.