首页>
外国专利>
Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
展开▼
机译:水平生长碳纳米管的方法和使用通过该方法生长的碳纳米管的场效应晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
Disclosed is a method of horizontally growing carbon nanotubes, in which the carbon nanotubes can be selectively grown in a horizontal direction at specific locations of a substrate having catalyst formed thereat, so that the method can be usefully utilized in fabricating nano-devices. The method includes the steps of: (a) forming a predetermined catalyst pattern on a first substrate; (b) forming a vertical growth preventing layer on the first substrate, which prevents carbon nanotubes from growing in a vertical direction; (c) forming apertures through the vertical growth preventing layer and the first substrate to expose the catalyst pattern through the apertures; and (d) synthesizing carbon nanotubes at exposed surfaces of the catalyst pattern in order to grow the carbon nanotubes in the horizontal direction.
展开▼