首页> 外国专利> molybdenum - tungsten - molybdenum - tungsten material for wiring, the wiring target, procedures to manufacture and thin molybdenum - tungsten wiring

molybdenum - tungsten - molybdenum - tungsten material for wiring, the wiring target, procedures to manufacture and thin molybdenum - tungsten wiring

机译:钼-钨-钼-布线用钨材料,布线靶,制造工艺以及薄钼-钨布线

摘要

A molybdenum-tungsten material for wiring comprising 20-95 atm % of tungsten and 80-5 atm % of molybdenum and inevitable impurities as a whole. It is prepared by integrally compositing molybdenum and tungsten by. e.g., powder metallurgy or dissolution techniques, or by arranging both metals so as to have the above-specified compositional ratio. This material has a low resistivity and excellent workability and etchant resistance, and provides a wiring thin film usable as, e.g., an address wiring of a liquid crystal display. The molydbenum-tungsten target for wiring comprises 20-95 atm % of tungsten and 80-5 atm % of molybdenum and inevitable impurities, and enables the wiring thin film to be formed at a good reproducibility. IMAGE
机译:用于布线的钼-钨材料整体上包含20-95atm%的钨和80-5atm%的钼和不可避免的杂质。它是通过将钼和钨整体复合而成。例如,通过粉末冶金或溶解技术,或通过将两种金属排列成具有上述指定的组成比。该材料具有低电阻率,优异的可加工性和耐蚀刻性,并且提供了可用作例如液晶显示器的地址布线的布线薄膜。用于布线的钼-钨靶包含20-95atm%的钨和80-5atm%的钼和不可避免的杂质,并且能够以良好的再现性形成布线薄膜。 <图像>

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号