首页> 外国专利> MOLYBDENUM TUNGSTEN MATERIAL FOR WIRING, MOLYBDENUM TUNGSTEN TARGET FOR WIRING, METHOD FOR THEIR PRODUCTION AND THIN MOLYBDENUM TUNGSTEN WIRING

MOLYBDENUM TUNGSTEN MATERIAL FOR WIRING, MOLYBDENUM TUNGSTEN TARGET FOR WIRING, METHOD FOR THEIR PRODUCTION AND THIN MOLYBDENUM TUNGSTEN WIRING

机译:接线用钨钨材料,接线用钨钨靶,其生产方法和薄钨钨接线

摘要

A molybdenum-tungsten material for wiring comprising 20-95 atm % of tungsten and 80-5 atm % of molybdenum and inevitable impurities as a whole. It is prepared by integrally compositing molybdenum and tungsten by. e.g., powder metallurgy or dissolution techniques, or by arranging both metals so as to have the above-specified compositional ratio. This material has a low resistivity and excellent workability and etchant resistance, and provides a wiring thin film usable as, e.g., an address wiring of a liquid crystal display. The molydbenum-tungsten target for wiring comprises 20-95 atm % of tungsten and 80-5 atm % of molybdenum and inevitable impurities, and enables the wiring thin film to be formed at a good reproducibility. IMAGE
机译:用于布线的钼-钨材料整体上包含20-95atm%的钨和80-5atm%的钼和不可避免的杂质。它是通过将钼和钨整体复合而成。例如,通过粉末冶金或溶解技术,或通过将两种金属排列成具有上述指定的组成比。该材料具有低电阻率,优异的可加工性和耐蚀刻性,并且提供了可用作例如液晶显示器的地址布线的布线薄膜。用于布线的钼-钨靶包含20-95atm%的钨和80-5atm%的钼和不可避免的杂质,并且能够以良好的再现性形成布线薄膜。 <图像>

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