Sige - thin film - semiconductor device having sige layer structure and method for producing

摘要

PURPOSE: To provide a thin film transistor having an excellent manufacturing yield and low cost and excellent performance and high reliability and its manufacturing method. ;CONSTITUTION: A glass substrate is used as a substrate 1, and polycrystalline silicone germanium is formed as a semiconductor layer 2 on the substrate 1. The semiconductor layer 2 is heat-oxidized at. 700°C or less to form a heat oxide film being a gate insulation layer 3. A gate electrode 4 is formed on the gate insulation layer 3. After an impurity element is implanted (5) with the use of the gate electrode 4 as a mask, a source region 6 and a drain region 7 are formed by activating by heat process. Thereafter, an insulation film 8, a source electrode 9 and a drain electrode 10 are formed.;COPYRIGHT: (C)1995,JPO