Element has a power semiconductor comprising diodes of the detection of temperature and of the diodes of absorption of the static and electricity a semiconductor device comprising this element

摘要

A first section of diodes (1b) in order to detect a temperature of the junction, and a cross section of diodes (1c) for the protection against the static electricity, are included in the same substrate as a cross-section of the element to a power semiconductor (1a). The number of diodes are equal in the first and second sections of diodes (1b, 1c), which equalises their impedances at high frequency. A capacitor (11) in order to reduce the impedance is connected between the input terminals of a section of the operational amplifier circuit (4) of a section of the control circuit (8).