Power - semiconductor element with diodes devices for temperature and for absorbing of static electricity, as well as power - a semiconductor device with such a power - semiconductor element

摘要

Power - semiconductor element (1), comprising:– a semiconductor substrate (1s);– a power - half conductor element component (1a), on the semiconductor substrate (1s) is formed;– a on the semiconductor substrate (1s) formed on the other side of the first diode device (1b) for detecting a temperature of the power - half conductor element component (1a) and– a on the semiconductor substrate (1s) and formed between two terminals of the first diode device (1b) switched second diode device (1c) for absorbing of static electricity,the first diode device (1b) a plurality of first diodes (1bd), are connected one after the other in the conducting direction,the second diode device (1c) parallel to the first diode device (1b) is switched to the non-conducting direction,the second diode device (1c) a plurality of second diodes (1cd), are connected one after the other in the reverse direction,the number of the second diodes (1cd) with the number of the first diodes (1bd) is identicaland wherein the high frequency - impedance characteristic of the second diode device (1c) in a frequency band of an electromagnetic interference shaft, the..