Power - semiconductor element with a diode for sensing the temperature and a diode for absorbing of static electricity, which is constructed as well as to power - a semiconductor device

摘要

A first diode device (1b) for detecting a by way of gear range of temperature and a second diode device (1c) for absorbing of static electricity, the part of a power - semiconductor element (1) are, in the same substrate, together with a power - half conductor element means (1a) is formed. Moreover, a plurality of second diodes (1cd), which the second diode device (1c) form, in an identical number to a plurality of first diodes (1bd) is present, which the first diode device (1b) form. Furthermore, a capacitor (11) for reducing the impedance between the input terminals of a provided for a forward voltage drop operation reinforcing - circuit means (4) of a control circuit means (8) is arranged. In this case, the capacitor (11) for forming a lc - low-pass filter action in that a forward onboard relay line a direction (9a) and a rearward onboard relay line a direction (9b) are covered by a tubular ferrite core.