Production of super lattice for InAs/GaSb/AlSb semiconductor structure

摘要

(57) Abstract Semiconductor structure and the method of forming this semiconductor are disclosed. This method, forms the n dope collector structure (306, 308 and 312) of the InAs/AlSb material on the baseplate, (302) forms the based structure (316) which includes p dope GaSb with respect to collector structure, includes with the fact that n dope emitter structure (318 and 322) of the InAs/AlSb material is formed with respect to based structure. As for the collector and emitter structure, desirably, it is the super lattice to which each includes the period of plural InAs sublayers and AlSb sublayer. Using this method, the heterojunction bipolar transistor which is produced is disclosed.