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Superlattice fabrication for inas/gasb/alsb semiconductor structures
Superlattice fabrication for inas/gasb/alsb semiconductor structures
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机译:用于inas / gasb / alsb半导体结构的超晶格制造
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摘要
A semiconductor structure and a method of forming same is disclosed. The method includes forming, on a substrate, an n-doped collector structure of InAs/AlSb materials; forming a base structure on said collector structure which base structure comprises p-doped GaSb; and forming, on said base structure, an n-doped emitter structure of InAs/AlSb materials. The collector and emitter structure are preferably superlattices each comprising a plurality of periods of InAs and AlSb sublayers. A heterojunction bipolar transistor manufactured using the method is disclosed.
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