首页> 外国专利> METHOD OF OBTAINING CRITICAL STATE OF OXIDATION AND REDUCTION, METHOD OF EVALUATING THE CRITICAL STATE, AND METHOD AND APPARATUS OF FORMING FERROELECTRIC FILM

METHOD OF OBTAINING CRITICAL STATE OF OXIDATION AND REDUCTION, METHOD OF EVALUATING THE CRITICAL STATE, AND METHOD AND APPARATUS OF FORMING FERROELECTRIC FILM

机译:获得氧化还原的临界状态的方法,评估临界状态的方法以及形成铁电薄膜的方法和装置

摘要

PPROBLEM TO BE SOLVED: To obtain critical states of the oxydation and reduction of a prescribed material such as iridium. PSOLUTION: A method of obtaining critical states of the oxidation and reduction comprises a heating process of heating a semiconductor material having a material layer including a substance which shows catalytic action in a reduced state to a prescribed temperature in a reaction furnace for vapor phase deposition, and an oxidation and reduction process of introducing a prescribed oxidant and a gasified prescribed organic solvent at a prescribed ratio into the reaction furnace, with the gasified prescribed organic solvent functioning as a reducing agent in the oxidation and reduction of the prescribed substance. This method allows the critical states of the oxidation and reduction of the prescribed substance on the surface of the material layer to be obtained. PCOPYRIGHT: (C)2003,JPO
机译:

要解决的问题:获得特定材料(例如铱)的氧化和还原的临界状态。解决方案:一种获得氧化和还原的临界状态的方法包括加热工艺,该工艺将具有材料层的半导体材料加热到用于蒸汽的反应炉中,该材料层包括在还原状态下表现出催化作用的物质,该物质在还原状态下显示出催化作用。相沉积,以及氧化和还原过程,其以规定的比例将规定的氧化剂和气化的规定的有机溶剂引入反应炉,其中气化的规定的有机溶剂在规定的物质的氧化和还原中用作还原剂。该方法允许获得材料层表面上规定物质的氧化和还原的临界状态。

版权:(C)2003,日本特许厅

著录项

  • 公开/公告号JP2003257955A

    专利类型

  • 公开/公告日2003-09-12

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP20020056146

  • 发明设计人 YAMAWAKI HIDEKI;

    申请日2002-03-01

  • 分类号H01L21/31;C23C16/40;H01L27/105;

  • 国家 JP

  • 入库时间 2022-08-22 00:21:39

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号