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Plasma cleaning device and plasma cleaning manner null

机译:等离子清洗装置及等离子清洗方式为空

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and method of cleaning works such as substrates with a plasma capable of cleaning off inorg. and org. contaminants of the works. ;SOLUTION: The method comprises applying a high frequency voltage to a lower electrode 7 set on a substrate 1 with a cover case 20 closed to generate a high-energy plasma in a vacuum chamber 22, whereby the plasma ions or molecules collide against the substrate 1 to etch off inorg. contaminants on the surface of the substrate 1, and applying a high frequency voltage to the lower electrode 7 with ensuring a gap between this electrode and the substrate 1 to generate a low-energy plasma in the chamber 22, whereby the plasma ions or molecules collide against the surface of the substrate 1 to volatilize org. contaminants on the surface of the substrate 1 due to the heat of their collision energy.;COPYRIGHT: (C)1998,JPO
机译:要解决的问题:提供一种清洁工作的设备和方法,例如具有能够清除无机物的等离子体的基板。和组织。工程的污染物。 ;解决方案:该方法包括在设置有盖壳体20的情况下向设置在基板1上的下部电极7施加高频电压,以在真空室22中产生高能等离子体,从而使等离子体离子或分子碰撞基板。 1以消除inorg。杂质沉积在基板1的表面上,并向下部电极7施加高频电压,同时确保该电极与基板1之间的间隙以在腔室22中产生低能等离子体,从而使等离子体离子或分子碰撞紧贴基材1的表面以挥发org。由于它们的碰撞能量的热量而在基板1的表面上形成污染物。;版权所有:(C)1998,JPO

著录项

  • 公开/公告号JP3389812B2

    专利类型

  • 公开/公告日2003-03-24

    原文格式PDF

  • 申请/专利权人 松下電器産業株式会社;

    申请/专利号JP19970089142

  • 发明设计人 古川 良太;

    申请日1997-04-08

  • 分类号H01L21/304;H01L21/3065;

  • 国家 JP

  • 入库时间 2022-08-22 00:21:33

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