Production manner null of optoelectronics semiconductor equipment, distribution pattern Bragg reflector, and polarization distribution pattern Bragg

摘要

PROBLEM TO BE SOLVED: To decrease the series resistance of a distributed Bragg reflector while the light absorbption factor of the Bragg reflector is maintained low, by a method in which the Bragg reflector is formed of a polymer material having a conductivity. ;SOLUTION: P-I-N structures 3, 4 and 5 are constituted in such a way that an optically active intrinsic region 4 is held between an N-type semiconductor layer 3 and a P-type semiconductor layer 5. A P-type polymer distributed Bragg reflector(DBR) mirror 6 is formed on the upper surface of the structure 5 on the structure 4 constituted on the structure 3. An N-type contact 8 is formed on the surface on the lower side of an N⁺ substrate 1 and a P-type ring contact 7 is formed on the surface on the upper side of the mirror 6. The mirror 6 is formed by laminating alternately first layers 6a, which are formed of a first transparent conductive polymer material, and second layers 6b, which are formed of a second transparent conductive polymer material. Thereby, the injection of carriers into the active region is increased and the light output efficiency of an optoelectronics semiconductor device can be enhanced.;COPYRIGHT: (C)1998,JPO