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Detection manner null of semiconductor type gas sensor and carbon monoxide

机译:半导体式气体传感器和一氧化碳的检测方式为零

摘要

PURPOSE: To selectively and well detect carbon monoxide even when periodic high temp. purge is performed by adding oxides of lead and lanthanum and palladium to a tin oxide semiconductor. ;CONSTITUTION: Aq. solns. of salts (e.g.; nitrate) of lead, lanthanum and palladium are prepared so that lead becomes 0.05-0.5mol%, lanthanum becomes 0.5-5mol% and palladium becomes 0.005-0.05mol% with respect to tin oxide to be independently infiltrated into sintered tin oxide or to be mixed to be infiltrated thereinto to form the responding part 3 of a semiconductor gas sensor 2. When lead and palladium are added to the tin oxide semiconductor, the selectivity of carbon monoxide (CO) to hydrocarbon such as methane or isobutane is enhanced and, when lanthanum is added thereto, the selectivity to hydrogen is also enhanced. Since CO selectivity can be ensured against obstruction gas to a certain degree not only within a temp. range of about 200-300°C being a CO detection temp. range but also within a temp. range of about 400°C capable of expecting purge effect at relatively high temp., CO can be detected stably over a long period of time.;COPYRIGHT: (C)1997,JPO
机译:目的:即使在周期性高温下也能选择性,良好地检测一氧化碳。通过将铅,镧和钯的氧化物添加到氧化锡半导体中进行清除。 ;构成:Aq。 solns。制备铅,镧和钯的盐(例如硝酸盐),以使铅相对于氧化锡独立地渗透到烧结体中,氧化铅变为0.05-0.5mol%,镧变为0.5-5mol%,钯变为0.005-0.05mol%氧化锡或将其混合渗入其中以形成半导体气体传感器2的响应部分3。当向氧化锡半导体中添加铅和钯时,一氧化碳(CO)对碳氢化合物(例如甲烷或异丁烷)的选择性当添加镧时,对氢的选择性也增强。由于可以在一定程度上不仅在温度范围内确保对阻塞气体的CO选择性。 CO检测温度为约200-300℃。范围内,但也在温度范围内。大约400°C的温度范围能够在较高的温度下实现吹扫效果。可以在很长一段时间内稳定地检测到CO .;版权所有:(C)1997,JPO

著录项

  • 公开/公告号JP3421477B2

    专利类型

  • 公开/公告日2003-06-30

    原文格式PDF

  • 申请/专利权人 新コスモス電機株式会社;

    申请/专利号JP19950160360

  • 发明设计人 三橋 弘和;佐藤 武司;

    申请日1995-06-27

  • 分类号G01N27/12;

  • 国家 JP

  • 入库时间 2022-08-22 00:20:56

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