MANUFACTURING METHOD FOR COPPER DAMASCENE STRUCTURE, AND COPPER DAMASSIN STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a copper damassin structure wherein the mismatch of dynamical characteristics between inorganic insulating layers used for a copper diffusion prevention insulating layer, a wiring layer, and a via layer is eliminated, and troubles such as exfoliation and cracking ocurring in a CMP process in damascene formation and upon a heat cycle are solved.;SOLUTION: In the manufacture of a copper damassin structure, when copper and a barrier metal layer or either of them provided on an inorganic insulating film are chemically and mechanically polished, at least one kind of a metal oxide layer selected from among B, Al, Ga, In, Tl, Ge, Sn, Pb, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Zn, Cd, P, As, Sb, Bi, and Ce, or a silicon oxide layer with higher density than the inorganic insulating film is made to exist on the inorganic insulating film.;COPYRIGHT: (C)2004,JPO