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METHOD FOR MANUFACTURING HIGH-PURITY NICKEL TARGET, AND HIGH-PURITY NICKEL TARGET

机译:制造高纯度镍靶的方法和高纯度镍靶

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-purity nickel target for magnetron sputtering which gives the film satisfactory thickness uniformity and plasma a satisfactory ignition property, even in a manufacturing process for a 300 mm wafer, and to provide a high-purity nickel target.;SOLUTION: The method for manufacturing the high-purity nickel target for magnetron sputtering with superior film thickness uniformity comprises steps of hot-forging the high-purity nickel, then cold-rolling it at a rolling reduction of 30% or higher, and further heat-treating it at 250°C or a higher temperature; and repeating the above cold-rolling and heat treatment at least twice.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种用于制造用于磁控溅射的高纯度镍靶的方法,该方法即使在300 mm晶片的制造过程中也能使膜具有令人满意的厚度均匀性和等离子体令人满意的点火性能,并提供纯度:目标:解决方案:制造具有优异膜厚均匀性的磁控溅射高纯度镍靶的方法包括以下步骤:对高纯度镍进行热锻,然后以30%的压下率进行冷轧或更高,并在250℃或更高的温度下进一步热处理;并重复上述冷轧和热处理至少两次。版权所有:(C)2003,JPO

著录项

  • 公开/公告号JP2003166051A

    专利类型

  • 公开/公告日2003-06-13

    原文格式PDF

  • 申请/专利权人 NIKKO MATERIALS CO LTD;

    申请/专利号JP20010365680

  • 发明设计人 YAMAKOSHI YASUHIRO;MIYASHITA HIROHITO;

    申请日2001-11-30

  • 分类号C23C14/34;

  • 国家 JP

  • 入库时间 2022-08-22 00:19:55

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