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RUTHENIUM COMPOUND FOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION METHOD, AND RUTHENIUM-CONTAINING THIN FILM OBTAINED FROM THE COMPOUND
RUTHENIUM COMPOUND FOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION METHOD, AND RUTHENIUM-CONTAINING THIN FILM OBTAINED FROM THE COMPOUND
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机译:用于有机化学气相沉积法的钌化合物,以及从该化合物中获得的含钌薄膜
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摘要
PROBLEM TO BE SOLVED: To provide a ruthenium compound for an organometallic chemical vapor deposition method by which proper film deposition rate can be obtained by an organometallic chemical vapor deposition method using a solid sublimation process and also to provide a ruthenium-containing thin film having excellent step coverage characteristics and surface morphology and superior electrical properties.;SOLUTION: In this ruthenium compound for an organometallic chemical vapor deposition method, 10 to 100 ppm rhenium is incorporated into a ruthenium compound composed of bis(cyclopentadienyl)ruthenium complex.;COPYRIGHT: (C)2003,JPO
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