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Production method and silicon thin film solar array null of polycrystal silicon thin film

机译:多晶硅薄膜的制造方法及硅薄膜太阳能电池阵列

摘要

PROBLEM TO BE SOLVED: To form a polycrystal silicon thin film having (111) orientation with a large grain diameter on the surface of a substrate. ;SOLUTION: On the surface of a substrate 2, an amorphous or crystallite silicon thin film 4 is formed and laser beams are applied on the surface to form a polycrystal silicon seed layer 5 having (111) orientation. Then, a polycrystal silicon deposited layer 6 having (111) orientation is formed by accumulating silicon atoms or silicon compound molecules, while applying energy beams on the surface of the seed layer 5. The polycrystal silicon thin film 3 having (111) orientation has less defects and is formed for a desired thickness with large diameter grains by such a manufacturing method. The polycrystal silicon thin film 3 with a large grain diameter with less defects can be used, for instance, for a highly efficient light carrier generating layer of a silicon solar cell.;COPYRIGHT: (C)1997,JPO
机译:解决的问题:在基板表面上形成具有大粒径的(111)取向的多晶硅薄膜。 ;解决方案:在衬底2的表面上形成非晶或微晶硅薄膜4,并在该表面上施加激光束以形成具有(111)取向的多晶硅籽晶层5。然后,通过在晶种层5的表面上施加能量束的同时,通过累积硅原子或硅化合物分子来形成具有(111)取向的多晶硅沉积层6。具有(111)取向的多晶硅薄膜3具有较小的厚度。缺陷并通过这种制造方法形成具有期望直径的大直径晶粒。具有大晶粒直径且缺陷较少的多晶硅薄膜3可以用于例如硅太阳能电池的高效光载流子产生层。; COPYRIGHT:(C)1997,JPO

著录项

  • 公开/公告号JP3351679B2

    专利类型

  • 公开/公告日2002-12-03

    原文格式PDF

  • 申请/专利权人 株式会社リコー;

    申请/专利号JP19960126800

  • 发明设计人 近藤 均;

    申请日1996-05-22

  • 分类号H01L21/20;H01L21/205;H01L31/04;

  • 国家 JP

  • 入库时间 2022-08-22 00:18:30

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