首页> 外国专利> PRODUCTION METHOD FOR SILICON THIN FILM, PRODUCTION METHOD FOR SILICON THIN-FILM SOLAR CELL, SILICON THIN FILM, AND SILICON THIN-FILM SOLAR CELL

PRODUCTION METHOD FOR SILICON THIN FILM, PRODUCTION METHOD FOR SILICON THIN-FILM SOLAR CELL, SILICON THIN FILM, AND SILICON THIN-FILM SOLAR CELL

机译:硅薄膜的生产方法,硅薄膜太阳能电池的生产方法,硅薄膜和硅薄膜太阳能电池

摘要

[Problem] To provide a production method for a silicon thin film, a production method for a silicon thin-film solar cell, and a silicon thin film. [Solution] A method for producing a silicon thin film (10) such that a silicon crystal (12) covers a silicon substrate (32), by: forming an inert surface (36)based on an inert layer (38) and an exposed surface (34) of the silicon substrate (32) by the selective formation on top of the silicon substrate (32) of the inert layer (38) wherein growth of the silicon crystal (12) is inert against silicon crystal (12) starting material gases (28); and supplying to the silicon substrate (32) a starting material gas (28) from among the starting material gases (28) that has dominant characteristics for a surface decomposition reaction in the silicon substrate (32), to make the silicon crystal (12) grow from the exposed surface (34). The method is characterized by forming the silicon thin film (10) so as to be releasable from the silicon substrate (32), by forming the width of the exposed surface (34) between 0.001 µm and 1 µm.
机译:[问题]提供一种硅薄膜的制造方法,硅薄膜太阳能电池的制造方法以及硅薄膜。 [解决方案]一种用于制造硅薄膜(10)的方法,该方法通过以下步骤形成:使硅晶体(12)覆盖硅衬底(32),该方法基于惰性层(38)形成惰性表面(36)并露出通过选择性地在惰性层(38)的硅衬底(32)的顶部上形成硅衬底(32)的表面(34),其中硅晶体(12)的生长对硅晶体(12)原材料是惰性的气体(28);从硅基板(32)中具有对表面分解反应起主要作用的原料气体(28)中,向硅基板(32)供给原料气体(28),从而制作硅晶体(12)。从裸露的表面生长(34)。该方法的特征在于,通过形成暴露表面(34)的宽度在0.001μm和1μm之间,从而形成可从硅衬底(32)上剥离的硅薄膜(10)。

著录项

  • 公开/公告号WO2012029333A1

    专利类型

  • 公开/公告日2012-03-08

    原文格式PDF

  • 申请/专利权人 AKIYAMA NOBUYUKI;

    申请/专利号WO2011JP51958

  • 发明设计人 AKIYAMA NOBUYUKI;

    申请日2011-01-31

  • 分类号C30B29/06;H01L21/02;H01L21/20;H01L31/04;

  • 国家 WO

  • 入库时间 2022-08-21 17:17:24

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