METHOD FOR CALCULATING GATE LEAD CURRENT, DEVICE SIMULATION METHOD AND MOS-TYPE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To determine a gate insulating film suitable for a fine transistor by predicting a gate insulating film whose gate leak current is minimized from the calculation result of the gate leak current with the energy distribution of a carrier taken into consideration.;SOLUTION: A Boltzmann transport equation and a Poisson's equation are solved by using a Monte Carlo method to calculate the energy distribution of the carrier, and an electric field applied to a gate insulating film is calculated from the potential distribution of the gate insulating film obtained by solving the Poisson's equation, and the distribution of a momentum component vertical to a boundary between the gate insulating film and a semiconductor substrate is calculated from among the momentum distribution of carrier obtained by solving the Boltzmann transport equation and probability that the carrier is injected from the electric field to the gate insulating film is calculated as the function of the momentum component vertical to the boundary, and gate leak current is calculated as the function of energy distribution from the probability and the distribution of the momentum component vertical to the boundary.;COPYRIGHT: (C)2004,JPO