RESISTIVE ELEMENT IN CSP AND SEMICONDUCTOR DEVICE EQUIPPED WITH CSP

摘要

PROBLEM TO BE SOLVED: To provide a technique of forming a resistive element which requires no resistive component as a post-mounting external component, hardly deteriorates its analog characteristics on account of a junction capacity or wiring capacity even when it is built in a chip, scarcely changes its resistance with time though a bias is applied for a long term, has less limitation imposed on its resistance due to a limitation in pattern area, can be reduced in size, and can be set to required resistance.;SOLUTION: In a process of manufacturing a wafer level CSP, the resistive element (barrier metal resistor R1) is formed of a barrier metal 15. Materials for the barrier metal 15 are selected, and the resistive element possessing a desired value (e.g. 1 Ω to 10 kΩ) is formed by changing at least one of the material, width, length, and thickness of the barrier metal layer 15. In Fig., an IC chip, a bonding pad, a protective film, copper rewiring, a copper post, a solder ball, passivation, and the barrier metal resistor are represented by 10, 11, 12, 14, 16, 17, 18, and R1, respectively.;COPYRIGHT: (C)2004,JPO