METHOD OF GROWING ARTIFICIAL QUARTZ CRYSTAL, ARTIFICIAL QUARTZ CRYSTAL AND WAFER OBTAINABLE FROM THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of growing an artificial quartz crystal for obtaining a wafer of a low etch channel density and an artificial quartz crystal by the same. ;SOLUTION: A quartz crystal plate of which main surface is nearly perpendicular to the surface of the desired wafer, (for example, if the wafer of an AT cut plate (35°15') is desired, the quartz crystal plate cut by rotating the same about 54°45' clockwise in a direction of a Y-axis from a Z-axis viewed from a +X axis direction) by utilizing the fact that the linear defects of the growth region of the artificial quartz crystal are nearly perpendicular toward the growth surface from the seed surface, is used for a seed quartz crystal. The linear defects within the desired wafer cut from the artificial quartz crystal grown in the manner described above exist in parallel to the growth surface and therefore the artificial quartz crystal having the low etch channel density can be obtained.;COPYRIGHT: (C)2003,JPO