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METHOD OF GROWING ARTIFICIAL QUARTZ CRYSTAL AND ARTIFICIAL QUARTZ CRYSTAL

机译:人工石英晶体和人工石英晶体的生长方法

摘要

PROBLEM TO BE SOLVED: To provide a method of growing an artificial quartz crystal having low linear defect density and the artificial quartz crystal having the low linear defect density.;SOLUTION: In the method of growing the artificial quartz crystal manufactured by a hydrothermal method, the difference between the lattice constant of the quartz crystal to be grown and the lattice constant of a seed crystal is made small considering the growing environment by using the seed crystal containing impurity having a concentration expected in the artificial quartz crystal to be grown.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种生长具有低线性缺陷密度的人造石英晶体和具有低线性缺陷密度的人造石英晶体的方法。解决方案:在生长通过水热法制造的人造石英晶体的方法中,考虑到生长环境,通过使用含有杂质的晶种具有在生长的人造石英晶体中预期的浓度,使要生长的石英晶体的晶格常数与晶种的晶格常数之间的差异变小。 :(C)2004,日本特许厅

著录项

  • 公开/公告号JP2004175590A

    专利类型

  • 公开/公告日2004-06-24

    原文格式PDF

  • 申请/专利权人 KINSEKI LTD;

    申请/专利号JP20020340892

  • 发明设计人 USAMI YOKO;

    申请日2002-11-25

  • 分类号C30B29/18;C30B7/10;

  • 国家 JP

  • 入库时间 2022-08-21 23:32:01

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