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METHOD FOR GROWING ARTIFICIAL QUARTZ CRYSTAL AND QUARTZ CRYSTAL PLATE

机译:人工石英晶体和石英晶体板的生长方法

摘要

PROBLEM TO BE SOLVED: To provide a method for growing an artificial quartz crystal which is capable of easily controlling the growth direction (angle of inclination) from a Z face by making a linear defect density smaller. ;SOLUTION: The seed quartz crystal in the method for growing the artificial quartz crystal for growing the artificial quartz crystal from the seed quartz crystal by a water heat synthesis method consists of a Z' plate 3b formed by inclining a Z plate 3a of which the main surface intersects orthogonally with the Z axis of crystal axes (X, Y and Z) counterclockwise or clockwise to the direction of the Z axis from the Y axis viewed from a+x axis direction at a rotating angle θ. In addition, when the rotating angle θ at which the growth rate ratio M/L of the growth rates L and M (mm/day) of the Z plate and Z' plate attains 1 is defined as the maximum rotating angle Q, the rotating angle θis specified to 0θQ° (where the rotating angle θ precludes 1.5, 2, 5, 8.5°).;COPYRIGHT: (C)2000,JPO
机译:解决的问题:提供一种生长人造石英晶体的方法,该方法能够通过减小线性缺陷密度来容易地控制Z面的生长方向(倾斜角度)。 ;解决方案:在通过水热合成方法从籽晶晶体中生长出人造石英晶体的方法中,籽晶晶体由Z'板3b构成,该Z'板3b倾斜了Z板3a从a + x轴方向看,主表面从Y轴看,与Y轴的Z轴方向逆时针方向或顺时针方向与晶体轴(X,Y和Z)的Z轴正交相交。另外,当旋转角度θ为将Z板和Z’板的生长速度L和M的生长速度比M / L(mm /天)达到1时的最大旋转角Q定义为,旋转角θ指定为0 < θ

著录项

  • 公开/公告号JP2000327492A

    专利类型

  • 公开/公告日2000-11-28

    原文格式PDF

  • 申请/专利权人 NIPPON DEMPA KOGYO CO LTD;

    申请/专利号JP19990134496

  • 发明设计人 KAGAMI TOSHIHIKO;

    申请日1999-05-14

  • 分类号C30B29/18;

  • 国家 JP

  • 入库时间 2022-08-22 01:27:29

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