METHOD OF MANUFACTURING STRUCTURE BOARD, STRUCTURE BOARD, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING DEVICE, AND DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is superior in characteristics such as light emission characteristics and high in reliability and has a long service life and a semiconductor device which is superior in characteristics and reliability and has a long service life.;SOLUTION: Second regions B having second average dislocation density higher than a first region A which is formed of crystal having a first average dislocation density are regularly arranged in the first region A on a nitride III-V compound semiconductor substrate 1. When a semiconductor light emitting device or a semiconductor device is manufactured by the used of the above nitride III-V compound semiconductor substrate 1, the light emitting region of the semiconductor light emitting device or the active region of the semiconductor device is formed so as to avoid the second regions B.;COPYRIGHT: (C)2003,JPO