METHOD FOR CONTROLLING INITIAL GROWTH OF COPPER FILM BY CHEMICAL VAPOR DEPOSITION (CVD) USING SURFACE TREATMENT ON BARRIER METAL FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a copper film on barrier metal so that excellent properties of trench filling and step coverage are provided.;SOLUTION: The chemical vapor deposition (CVD) method for copper films involves a process, including a process wherein a structure containing barrier metal and with the surface of the barrier metal exposed is formed on a substrate, in which the substrate is prepared; a process in which the prepared substrate is placed in a CVD chamber; a process in which the substrate is heated to a temperature of approx. 200°C to 250°C; a process in which a flow of water is let in carrier gas for at least one minute; a process in which the flow of water is stopped; and a process in which a flow of precursor of copper is started.;COPYRIGHT: (C)2003,JPO