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Semiconductor integrated circuit device with internal potential generating circuit allowing external tuning of internal power supply potential

机译:具有内部电位产生电路的半导体集成电路器件,允许外部调节内部电源电位

摘要

A semiconductor integrated circuit device includes a plurality of internal circuits, internal power supply potential generating circuits for converting a level of an external power supply potential to supply an internal power supply potential at a level corresponding to a level set signal, a control portion for successively applying the plurality of level set signals to each of the internal potential generating circuits, and a measuring circuit for comparing each internal potential with a reference potential, and holding information representing results of the comparison. During a test period, a comparing circuit in the internal potential generating circuit compares a level corresponding to the level set signal with a comparison reference potential.
机译:半导体集成电路装置包括:多个内部电路;用于将外部电源电位的电平转换为与电平设定信号对应的电平来提供内部电源电位的内部电源电位产生电路;以及用于依次控制的控制部。将多个电平设置信号施加到每个内部电势产生电路,以及用于将每个内部电势与参考电势进行比较并保持表示比较结果的信息的测量电路。在测试期间,内部电势产生电路中的比较电路将与电平设置信号相对应的电平与比较基准电势进行比较。

著录项

  • 公开/公告号US2003112676A1

    专利类型

  • 公开/公告日2003-06-19

    原文格式PDF

  • 申请/专利权人 MITSUBISHI DENKI KABUSHIKI KAISHA;

    申请/专利号US20020200257

  • 发明设计人 TSUKASA OOISHI;

    申请日2002-07-23

  • 分类号G11C7/00;

  • 国家 US

  • 入库时间 2022-08-22 00:11:53

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