首页> 外国专利> SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH INTERNAL POTENTIAL GENERATING CIRCUIT ALLOWING EXTERNAL TUNING OF INTERNAL POWER SUPPLY POTENTIAL

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH INTERNAL POTENTIAL GENERATING CIRCUIT ALLOWING EXTERNAL TUNING OF INTERNAL POWER SUPPLY POTENTIAL

机译:具有内部电位产生电路的半导体集成电路装置,允许内部调整内部电源电位

摘要

A semiconductor integrated circuit device includes a plurality of internal circuits, internal potential generating circuits for converting a level of an external power supply potential to supply an internal potential at a level corresponding to a level set signal, a control portion for successively applying the plurality of level set signals to each of the internal potential generating circuits, and a measuring circuit for comparing each internal potential with a reference potential, and holding information representing results of the comparison. During a test period, a comparing circuit in the internal potential generating circuit compares a level corresponding to the level set signal with a comparison reference potential.
机译:半导体集成电路装置包括:多个内部电路;用于转换外部电源电势的电平以提供与电平设置信号相对应的电平的内部电势的内部电势产生电路;用于顺序地施加多个电势的控制部分。电平设置信号发送给每个内部电势发生电路,测量电路,用于将每个内部电势与参考电势进行比较,并保存表示比较结果的信息。在测试期间,内部电势产生电路中的比较电路将与电平设置信号相对应的电平与比较基准电势进行比较。

著录项

  • 公开/公告号KR100469835B1

    专利类型

  • 公开/公告日2005-02-02

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20020065147

  • 发明设计人 오오이시쓰카사;

    申请日2002-10-24

  • 分类号G11C5/14;

  • 国家 KR

  • 入库时间 2022-08-21 22:04:12

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号