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High resistivity silicon wafer and method of producing same using the magnetic field Czochralski method
High resistivity silicon wafer and method of producing same using the magnetic field Czochralski method
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机译:高电阻率硅晶片及其使用磁场的直拉法制造方法
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摘要
An improved method of obtaining a wafer exhibiting high resistivity while preventing the reduction of resistivity due to the generation of oxygen donors provided by: a) using the CZ method to grow a silicon single crystal ingot in the presence of a magnetic field, such crystal having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 5 to 10 ppma and b) processing the ingot into a wafer.
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