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Process for the preparation of an ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile capable of forming an enhanced denuded zone
Process for the preparation of an ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile capable of forming an enhanced denuded zone
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机译:具有能够形成增强的裸露区的具有不对称空位浓度分布的理想氧沉淀硅晶片的制备方法
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摘要
A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies in the wafer. During the heat-treatment, the front and back surfaces of the wafer are each exposed to either a nitriding gas or a non-nitriding gas. The front surface of the heat-treated wafer is then oxidized by heating in the presence of an oxygen-containing atmosphere in order to further effect the vacancy concentration profile within the wafer. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a wafer having a vacancy concentration profile determined in part by the gas to which each surface is exposed, in part by the surface oxidation and in part by the cooling rate.
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