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Electrostatic discharge (ESD) protection circuit of silicon-controlled rectifier (SCR) structure operable at a low trigger voltage
Electrostatic discharge (ESD) protection circuit of silicon-controlled rectifier (SCR) structure operable at a low trigger voltage
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机译:可在低触发电压下工作的可控硅(SCR)结构的静电放电(ESD)保护电路
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摘要
An ESD protection circuit having silicon-controlled rectifier structure, includes a PNP transistor and an NPN transistor. A switch circuit is connected between a ground voltage terminal and a well region that is a base of the PNP transistor. The switch circuit is formed of plural diode-coupled MOS transistors, so that a trigger voltage of the SCR is determined by threshold voltages of the MOS transistors.
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