Self-triggered stacked silicon-controlled rectifier structure (STSSCR) for on-chip electrostatic discharge (ESD) protection

摘要

A new self-triggered stacked silicon-controlled rectifier (SCR) structure (STSSCR) for on-chip electrostatic discharge (ESD) protection in a 0.35μm CMOS is proposed. The proposed SCR consists of a modified lateral SCR (MLSCR) and multiple double trigger SCR (DTSCR). The experimental results show that SBSSCR has a stable trigger voltage and an adjustable holding voltage. The holding voltage is decided by the number of the DTSCR.