Impurity quantity transfer device enabling reduction in pseudo diffusion error generated at integral interpolation of impurity quantities and impurity interpolation method thereof

摘要

An impurity quantity transfer device and method for conducting a numerical analysis of a semiconductor device diffusion process, applying integral interpolation of diffusion impurity quantities and obtaining an accurate impurity concentration distribution with a reduced pseudo diffusion, even at a region with a sharp impurity concentration gradient. A control volume region is generated to bridge a plurality of mesh elements of an interpolation destination mesh, and a subdivisional control volume is generated for an interpolation source mesh. The impurity quantities are summed for the grid points on the source mesh, and a initial impurity concentration is generated for the control volume region. The initial impurity concentration is multiplied by a conversion coefficient to produce a formal impurity concentration. From the formal impurity concentration, an impurity quantity corresponding to each grid point on the destination mesh is calculated. For further refinement, the errors caused by pseudo diffusion are estimated, and mesh points are added in regions where precision is otherwise insufficient.