Gallium nitride-based compound semiconductor chip and method for producing the same, and gallium nitride-based compound semiconductor wafer

摘要

A gallium nitride-based compound semiconductor chip comprises a gallium nitride substrate having a (0001) facet of a wurtzite type crystal structure as a principal facet and a gallium nitride-based compound semiconductor crystal formed on the gallium nitride substrate, wherein: the gallium nitride-based compound semiconductor chip has a plurality of division facets and at least one of the plurality of division facets of the gallium nitride-based compound semiconductor chip is in a cleave facet direction of the gallium nitride substrate.