首页>
外国专利>
Reducing resist residue defects in open area on patterned wafer using trim mask
Reducing resist residue defects in open area on patterned wafer using trim mask
展开▼
机译:使用修整掩模减少图案化晶圆开口区域的抗蚀剂残留缺陷
展开▼
页面导航
摘要
著录项
相似文献
摘要
One aspect of the present invention relates to a method for reducing resist residue defects on a wafer structure. The method involves providing a semiconductor structure having a photoresist, the photoresist comprising open areas and circuit areas thereon; irradiating the open areas and circuit areas through a first photomask with a first energy dose to effect an image-wise pattern in the photoresist; irradiating the open areas of the photoresist through a second photomask with a second energy dose; and developing the photoresist.
展开▼