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Set of masks for projection of structure patterns on each mask to photosensitive layer on semiconductor wafer as trim or correction mask in lithographic process in manufacture of integrated circuits
Set of masks for projection of structure patterns on each mask to photosensitive layer on semiconductor wafer as trim or correction mask in lithographic process in manufacture of integrated circuits
Structure patterns mutually correlated on masks are projected onto the same photosensitive layer (R) on semiconductor wafer (W) in projection system. The first mask (P) contains opaque structure element (25) on first position so that its position projection onto wafer forms not-exposed region of lacquer in photo-sensitive layer. There is at least one second mask (T), allocated to first mask, with semi-transparent region (23') on second position of second mask, coinciding with first position on first mask, whose image on wafer illuminates at least part of lacquer region in photo-sensitive layer. Independent claims are included for method of producing set of several masks.
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