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Highly reflective ohmic contacts to III-nitride flip-chip LEDs
Highly reflective ohmic contacts to III-nitride flip-chip LEDs
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机译:与III型氮化物倒装芯片LED的高反射欧姆接触
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摘要
An inverted III-nitride light-emitting device (LED) with highly reflective ohmic contacts includes n- and p-electrode metallizations that are opaque, highly reflective, and provide excellent current spreading. The n- and p-electrodes each absorb less than 25% of incident light per pass at the peak emission wavelength of the LED active region.
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