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Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

机译：高效掺杂4H-SIC：引脚二极管蒸汽液 - 固体选择性外延的应用及欧姆触点的特定接触电阻的销二极管

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Nicolas Thierry-Jebali; Mihai Lazar; Arthur Vo-Ha; Davy Carole; Véronique Soulière; Anne Henry; Dominique Planson; Gabriel Ferro; Leszek Konczewicz; Sylvie Contreras; Christian Brylinski; Pierre Brosselard;
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1. Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts [J] . N. Thierry-Jebali, M. Lazar, A. Vo-Ha, Materials science forum . 2014,第pta2期

机译：气相保护的高p型掺杂4H-SiC：PiN二极管的汽液固外延的应用和欧姆接触的比接触电阻的提高
2. Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport [J] . Thierry-Jebali N., Vo-Ha A., Carole D., Applied Physics Letters . 2013,第21期

机译：在通过气液固传输选择性生长的高度p型掺杂的4H-SiC层上进行的极低的比接触电阻测量
3. Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport [J] . N. Thierry-Jebali, A. Vo-Ha, D. Carole, Applied Physics Letters . 2013,第21期

机译：在通过气液固传输选择性生长的高度p型掺杂的4H-SiC层上进行的极低的比接触电阻测量
4. Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts [C] . N. Thierry-Jebali, M. Lazar, A. Vo-Ha, Conference on Silicon Carbide and Related Materials . 2014

机译：高效掺杂4H-SIC：引脚二极管蒸汽液 - 固体选择性外延的应用及欧姆触点的特定接触电阻的销二极管
5. Fabrication and characterization of ohmic contacts to p- and n-type silicon carbide with applications to p-n junction diodes. [D] . Oder, Tom Nelson. 1999

机译：p型和n型碳化硅的欧姆接触的制造和表征，并应用于p-n结二极管。
6. Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings [O] . Monia Spera, Giuseppe Greco, Domenico Corso, 2019

机译：在不同的注入后退火后p型铝注入的4H-SiC层上的欧姆接触
7. Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport [O] . Thierry-Jebali, N., Vo-Ha, A., Carole, D., 2013

机译：在通过气液固传输选择性生长的高度p型掺杂的4H-SiC层上进行的极低的比接触电阻测量

Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

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