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Plasma treatment method and apparatus

机译:等离子体处理方法及装置

摘要

An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.
机译:一种用于处理基板的设备,该设备包括腔室和在腔室中形成的开口,该开口允许将基板传送到腔室中或从腔室中取出。该腔室还包括装配在电极周围的可拆卸挡板。为了开始处理,将基板放置在电极上,并将腔室中的气体耗尽或供应气体。然后,将电极与挡板一起垂直提起,并将挡板移动到比腔室的开口的上端高的位置或比比开口的下端低的位置的位置。腔室的开口。这允许挡板将腔室的开口附近的区域与处理区域隔离开,并使反应产物附着至挡板。

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