CHEMICAL MECHANICAL POLISHING OF COPPER-OXIDE DAMASCENE STRUCTURES

摘要

Title: CHEMICAL MECHANICAL POLISHING OF COPPER-OXIDE DAMASCENE STRUCTURES[err]Abstract: A method of chemical mechanical polishing of a metal damascene structure which includes an insulation layer having trenches on a wafer and a metal layer having a lowerportion located in trenches of the insulation layer and an upper portion overlying the lower portion and the insulation layer is provided. The method comprises a first step of planarizing theupper portion of the metal layer and a second step of polishing the insulation layer and the lower portion of the metal layer. In the first step of planarizing the upper portion of the metal layer, the wafer and a polishing pad in urged at an applied pressure p and a relative velocity v in a contact mode between the waferand the polishing pad to promote an increased metal removal rate. In the second, the insulation layer and the lower portion of the metal layer are polished in a steady-state mode to formindividual metal lines in the trenches with minimal dishing of the metal lines and overpolishing of the insulation layer.