首页> 外国专利> AUTOMATIC VALVE CONTROL SYSTEM IN PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM AND CHEMICAL VAPOR DEPOSITION SYSTEM FOR DEPOSITION OF NANO-SCALE MULTILAYER FILM

AUTOMATIC VALVE CONTROL SYSTEM IN PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM AND CHEMICAL VAPOR DEPOSITION SYSTEM FOR DEPOSITION OF NANO-SCALE MULTILAYER FILM

机译:等离子体化学气相沉积系统中的自动阀控制系统和用于沉积纳米多层膜的化学气相沉积系统

摘要

PURPOSE: A plasma chemical vapor deposition equipment for manufacturing nano-scale multilayer film having ultra-high hardness and multiple functions using plasma chemical deposition and chemical vapor deposition is provided, and an automatic valve control system of the chemical vapor deposition equipment is provided. CONSTITUTION: In a system for manufacturing a multilayer thin film using plasma chemical vapor deposition and chemical vapor deposition, the automatic valve control system(20) of plasma chemical vapor deposition equipment and chemical vapor deposition equipment for manufacturing nano-scale multilayer film comprises a chamber(10) in which at least two or more components are formed into a multilayer thin film by plasma chemical deposition and chemical vapor deposition; at least two source supply parts(25,26) for supplying a reaction material including components composing any one layer in the multilayer thin film; at least two paths(22,23) the middle part of which is connected to the respective source supply parts, one end of which is connected to the chamber, and the other end of which is connected to bypass pipe for controlling flux; a vacuum pump connected to the bypass pipe; and at least four valves(27 to 30) opened and closed with being installed at both sides of the respective paths centering around a connection region of the respective source supply parts.
机译:目的:提供一种用于利用等离子体化学沉积和化学气相沉积来制造具有超高硬度和多功能的纳米级多层膜的等离子体化学气相沉积设备,并且提供该化学气相沉积设备的自动阀控制系统。组成:在使用等离子体化学气相沉积和化学气相沉积制造多层薄膜的系统中,等离子体化学气相沉积设备和用于制造纳米级多层膜的化学气相沉积设备的自动阀控制系统(20)包括一个腔室(10)通过等离子化学沉积和化学气相沉积将至少两种或更多种组分形成多层薄膜;至少两个源供应部分(25,26),用于供应反应材料,该反应材料包括组成多层薄膜中任何一层的成分;至少两条路径(22,23),其中间部分连接到相应的源供应部分,其一端连接到腔室,而另一端连接到用于控制通量的旁通管;连接至旁通管的真空泵;至少四个阀(27至30)被安装在以各个源供应部的连接区域为中心的各个路径的两侧而被打开和关闭。

著录项

  • 公开/公告号AU2003235486A1

    专利类型

  • 公开/公告日2003-10-27

    原文格式PDF

  • 申请/专利权人 LEE JUNG JOONG;

    申请/专利号AU20030235486

  • 发明设计人 JU WAN LIM;SEUNG HOON LEE;JUNG JOONG LEE;

    申请日2003-04-07

  • 分类号C23C16/455;

  • 国家 AU

  • 入库时间 2022-08-21 23:56:42

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