METHOD FOR SELECTION OF PARAMETERS FOR IMPLANT ANNEAL OF PATTERNED SEMICONDUCTOR SUBSTRATES AND SPECIFICATION OF A LASER SYSTEM

摘要

A modeling method to identify optimum laser parameters for pulsed laser annealing of implanted dopants into patterned semiconductor substrates is provided. The modeling method provides the optimum range of wavelength, pulse length, and pulse shape that fully anneals the implanted regions while preserving the form and function of ancillary structures. Improved material parameters for the modeling are identified. The modeling method is used to determine an experimental verification method that does not require a fully equipped laser processing station. The model and verification are used to specify an optimum laser system that satisfies the requirements of large area processing of silicon integrated circuits. An alexandrite laser operating between 700nm and 810nm with a pulse length of 5ns to 20nS is identified for implant anneal of shallow dopants in silicon.