METHOD AND DEVICE FOR A CONDITION-DEPENDENT CONTROL OF THE TRANSIENT BEHAVIOR OF POWER SEMICONDUCTOR SWITCHES

摘要

The present invention relates to a kind of integrated control methods, the power semiconductor switch (S1-S4) during opening and closing. It is controlled to make to safeguard the serial freewheeling diode (alias of dysprosium) of the fringe region of controlled clearance in a kind of collector current transient state dictionary/ventilation of switching phase. It is controlled in-switch step B collector voltage gradient dvCE/dt, so that particularly switching semiconductor switchs (S1-S4), closed control loop is consequently formed and informs primary and second level conditional-variable (optionally vc, DVC/dt, internal combustion, dictionary/dt, iG, vG, excavation/dt, dvG/dt) semiconductor switch (S1-S4). Embodiment is related, the controllability semiconductor switch (S1-S4) especially realized with prephases A0, B0, by defining collector voltage vCE controls setting value vCEref (function), transfer time (the t 1 of detection? t2), switch step A and B, variable controller amplification (thousand friends spy (Δ t)), bound (SM, Sm) is according to ideal gate current gradient (iG (Δ t)) and tolerance range control collector voltage (vCE). The invention further relates to gate driver (GT), it is preferred that having subregion amplifier stage (7a, 7b) for implement according to the method for the present invention, to semiconductor switch (S1-S4) and a series of power semiconductor switch (S1-S4) those with this gate driver (GT).