Method and device for a condition-dependent control of the transient behavior ofpower semiconductor switches

摘要

The invention relates to a comprehensive control method for switch on and off processes of power semiconductor switches (SSUB1/SUB-SSUB4/SUB). In a switching phase A the collector current transient diSUBc/SUB/dt is controlled in order to safeguard a controlled clear-off of the edge zones of a serial freewheeling diode (DSUBs/SUB). In a switching phase B the collector voltage gradient dvSUBCE/SUB/dt is controlled in order to specifically switch the power semiconductor switch (SSUB1/SUB-SSUB4/SUB), thereby establishing a closed control loop by returning primary and optionally secondary condition variables (vSUBc/SUB, dvSUBc/SUB/dt, iSUBc/SUB, diSUBc/SUB/dt, iSUBG/SUB, vSUBG/SUB, diSUBG/SUB/dt, dvSUBG/SUB/dt) of the power semiconductor switch (SSUB1/SUB-SSUB4/SUB). The embodiments relate inter alia to prephases A 0 , B 0 for achieving the controllability of the power semiconductor switch (SSUB1/SUB-SSUB4/SUB), a vSUBCE /SUBcontrol by defining a collector voltage set-point function vSUBCE/SUBSUPref /SUP(t), detection of a transfer time (tSUB1/SUB, tSUB2/SUB) of switching phases A and B, a variable controller amplification (kSUBp/SUB(t)), an upper and lower limit (SSUBM/SUB, SSUBm/SUB) in accordance with an ideal gate current gradient (iSUBG/SUB(t)) and a tolerance band control for the collector voltage (vSUBCE/SUB). The invention further relates to a gate driver (GT), preferably with partitioned amplifier stages ( 7 a , 7 b) for carrying out the inventive method, and to a power semiconductor switch (SSUB1/SUB-SSUB4/SUB) and a series connection of power semiconductor switches (SSUB1/SUB-SSUB4/SUB) that are provided with such a gate driver (GT).