Optoelectronic semiconductor device having mos field effect transistor with photodiode and method for fabricating the same

摘要

PURPOSE: AN optoelectronic semiconductor device having a MOS(Metal Oxide Semiconductor) FET(Field Effect Transistor), a photodiode and a manufacturing method thereof are provided to be capable of increasing optical gain by controlling the gate voltage of the MOS FET using the optical voltage generated by incident light. CONSTITUTION: An optoelectronic semiconductor device(100) is provided with a semiconductor substrate, the first conductive type high concentration source/drain region(131,132) formed in an active region of the semiconductor substrate and spaced apart from each other as much as a channel region, a gate isolating layer formed at the upper portion of the channel region, and a gate conductive layer(150) formed at the upper portion of the gate isolating layer. At this time, the gate conductive layer includes the first conductive type impurity region and the second conductive type impurity region.