首页> 外国专利> Monolithic integrated circuit device with microwave power amplifier including matching circuit using distributed integer line

Monolithic integrated circuit device with microwave power amplifier including matching circuit using distributed integer line

机译:具有微波功率放大器的单片集成电路器件,包括使用分布式整数线的匹配电路

摘要

The microwave power amplifier is provided with an input / output stage matching circuit and one or more stage-to-end matching circuits. The amplifier, the signal output pad, and the first and second voltage supply pads are formed on one and the same semi-insulating substrate. The drain of the first FET of the output stage is connected to the first voltage supply pad through the first distributed constant line and to the signal output pad through the second distributed constant line, so that the first and second distributed constant lines constitute the matching circuit of the output stage. Contribute.;The drain of the second FET in front of the output stage is connected to the second voltage supply pad via a third distributed constant line that acts as a connecting conductor. The width of the first distributed constant line is wider than the width of the third distributed constant line and has a length that limits the impedance seen from the drain of the output FET to the first voltage supply pad at the operating frequency of the amplifier to a non-infinity value.
机译:微波功率放大器具有输入/输出级匹配电路和一个或多个级对端匹配电路。放大器,信号输出垫以及第一和第二电压供应垫形成在一个相同的半绝缘基板上。输出级的第一FET的漏极通过第一分布常数线连接到第一电压供应焊盘,并且通过第二分布常数线连接到信号输出焊盘,从而第一分布常数线和第二分布常数线构成匹配电路。输出阶段。在输出级前面的第二FET的漏极通过充当连接导体的第三条分布恒定线连接到第二电压供应焊盘。第一分布常数线的宽度比第三分布常数线的宽度宽,并且具有将在放大器的工作频率下从输出FET的漏极到第一电压供应焊盘的阻抗限制为一定的长度。非无限值。

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